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In recent years, the reduction of rolling resistance of tires has become more significant in the tire industry because it has close relation to the fuel consumption efficiency and CO² emission of motor vehicles. Rolling resistance is primarily related to the hysteresis loss in the tire tread compounds and silica has been widely used owing to its lower hysteresis nature than that of carbon black. New concept of styrene butadiene copolymers polymerized in solution (S-SBRs) which can strongly interact with silica has been proposed to reduce rolling resistance. Various S-SBRs having two different functional groups were polymerized and the viscoelastic properties of their compounds were measured. S-SBRs that have both amino group and alkoxysilyl group showed superior improvement on hysteresis loss property in silica compound compared to that of only alkoxysilyl group. This new class of S-SBRs also showed excellent mechanical properties and abrasion resistance because of the strong interaction with silica and the resulting improvement of silica dispersion.

Performance Comparison of Chemically Amplified Resists under EUV, EB and KrF Exposure

Daisuke Shimizu, Nobuji Matsumura, Toshiyuki Kai, Yoshikazu Yamaguchi, Tsutomu Shimokawa, Koichi Fujiwara

To design materials for EUV resist, it is useful to identify and characterize acid generation mechanisms under EUV exposure. EUV exposure is crucial to obtain information about acid generation mechanism under EUV exposure and evaluate EUV resists. But there are currently a limited number of EUV exposure tools available worldwide. Therefore, an alternative exposure method should be considered to accelerate EUV resist development. In this paper, the performance of chemically amplified resists under EUV, EB and KrF exposure was compared regarding sensitivity, LWR and pattern-profile not only to elucidate the acid generation mechanism under EUV exposure but also to consider alternative exposure methods. Regarding sensitivity, good correlation was observed between EUV and EB exposure, however, in LWR and resist pattern profile, the correlation was poor. As a result, alternative exposure methods could be used only for basic evaluation and EUV exposure should be applied to develop EUV resist using chemically amplified resist. From the correlation of sensitivity between EUV and EB exposure, it is suggested that the main acid generation mechanism under EUV exposure was ionization.

Solution-Processed Silicon Films and Transistors

Yasuo Matsuki, Haruo Iwasawa, Daohai Wang, Yoshitaka Koshikiya, Tatsuya Shimoda

The use of solution processes -- as opposed to conventional vacuum processes and vapour-phase deposition -- for the fabrication of electronic devices has received considerable attention for a wide range of applications, with a view to reducing processing costs. In particular, the ability to print semiconductor devices using liquid-phase materials could prove essential for some envisaged applications, such as large-area flexible displays. Recent research in this area has largely been focused on organic semiconductors, some of which have mobilities comparable to that of amorphous silicon (a-Si) ; but issues of reliability remain. Solution processing of metal chalcogenide semiconductors to fabricate stable and high-performance transistors has also been reported. This class of materials is being explored as a possible substitute for silicon, given the complex and expensive manufacturing processes required to fabricate devices from the latter. However, if high-quality silicon films could be prepared by a solution process, this situation might change drastically. Here we demonstrate the solution processing of silicon thin-film transistors (TFTs) using a silane-based liquid precursor. Using this precursor, we have prepared polycrystalline silicon (poly-Si) films by both spincoating and ink-jet printing, from which we fabricate TFTs with mobilities of 108cm²V^-1s^-1 and 6.5cm²V^-1s^-1 , respectively. Although the processing conditions have yet to be optimized, these mobilities are already greater than those that have been achieved in solution-processed organic TFTs, and they exceed those of a a-Si TFTs ( < 1cm²V^-1s^-1 )

The Effect of the Fiber Temperature During Fiber Drawing on the Properties of Primary Coatings

Satoshi Kamo, Tomoaki Seko, Tetsuo Katsuta, Takahiko Kurosawa

The speed of fiber drawing, temperature of fiber glass and coating properties of primary coatings during fiber drawing, and mechanical properties of primary coatings after curing were investigated. The temperature of fiber glasses just before coating of the primary rose up with the fiber drawing speed. It was found that the diameter of primary coated fibers decreased when the temperature of the glass was over 50ºC. The thinning of primary layers on the fiber drawing was caused by the decreasing of contact angles of primary coatings. The effect of glass surface temperature on mechanical properties of primary coatings was investigated. The n-value of fibers made without cooling increased with the fiber drawing speed, while the n-value of fibers made with cooling decreased. It was found that the stripping force affected the n-value of coated fibers.

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