Sitemap JAPANESE
| Corporate Profile | News&Events |  IR  |  R&D  | Products | CSR | License | Group |  
Message | Organization | Laboratories | Awards | Latest Research Reports
HOME > R&D > Latest Research Reports
JSR TECHNICAL REVIEW No.107 (March, 2000)
   
Development of Photo Alignment Materials with High Sensitivity to Near UV Light
Yutaka Makita , Toru Natsui , Shoichi Nakata , Shin-ichi Kimura , Masayuki Kimura , Yasuo Matsuki , Yasumasa Takeuchi
We developed new photo alignment materials based on chalconyl structure with high sensitivity to near UV Poly (4-methacryloyloxy chalcone), PM4Ch, and its derivatives exhibited good LC alignment upon near UV exposure. The photoreactivity of chalconyl structure was high due to longer wavelength of UV absorption. The high sensitivity of PM4Ch, compared with Poly (4'-methacryloyloxy chalcone), PMCh, could be explained by the suppression of isomerization and/or by the alignment capability of the side chain structure. The characteristics of PM4Ch's derivatives are also reported.
   
Development of ArF Single Layer Resist Materials Using Tetracyclododecene
Toru Kajita
Alicyclic segment is the key component for the 193nm single layer resist material. A variety of resin systems have been proposed for 193nm resist material since adamantyl methacrylate system was proposed by Fujitsu's researchers in 1992. In this paper, the material potential for 193nm single layer resist was discussed regarding several alicyclic resin systems based on tetracyclododecenes. Physical properties and lithographic performances were discussed about three resin platform systems. Each resin system showed good physical properties and imaging capability for 193-nm single layer resist. Some practical performances such as PED stability and PEB temperature dependence were also evaluated. An optimized resist showed good lithographic performances on a 0.60NA exposure tool with a quadrupole illumination; resolution of 120nm-dense L/S and 100nm semi-isolated lines on SiON substrate. The results suggested that alicyclic resins based on tetracyclododecenes are applicable to 130nm rule device fabrications and the smaller.
   
Preparation of Micron-Size Polystyrene Particles in Supercritical Carbon Dioxide
Hiroshi Shiho , Joseph M. DeSimone
The dispersion polymerization of styrene in supercritical CO2 utilizing poly (1, 1-dihydroperfluorooctyl acrylate) mp-FOAn as a polymeric stabilizer was investigated as well as poly(1, 1-dihydroperfluorooctyl methacrylate)mp-FOMAn. The resulting high yield („85%) of spherical and relatively uniform polystyrene (PS) particles with micron-size range (2.9`9.6micro m) were formed for 40h at 370 bar using various amounts of p-FOA and p-FOMA as a stabilizer with good stability until the end of the reaction. The particle diameter was shown to be dependent on the weight percent of added stabilizer. Previously we reported that p-FOA was not effective for the dispersion polymerization of styrene as a stabilizer. Herein we find that p-FOA can indeed be an effective stabilizer for the dipersion polymerization of styrene in supercritical CO2. This study suggests the possibility that fluorinated acrylic homopolymers are effective for the dispersion polymerization of various kinds of monomers as a stabilizer.
   
Di Functional Solution SBR for Low Hysteresis Compound
Toshihiro Tadaki , Hiroshi Akema , Naokazu Kobayashi , Akihiro Koike , Fumio Tsutsumi
It is well known that the various chain-end modified solution SBRs show the reduced hysteresis properties in the carbon black filled vulcanizate. We consider the effect is due to the heightened interaction between the modified molecular ends and the carbon black. However, the modified points of such SBRs are only their terminal polymerization chain ends. Therefore, we prepared hdi-functional SBRh that was introduced functional groups to both polymerization initial end and terminal end. We expected the developed SBR to interact with carbon black more strongly. As the results of the evaluation in the SBR single system, the hdi-functional SBRh showed lower tan ƒÂ at 50Ž (10Hz), higher modulus, better wear resistance and lower Payne effect than the hmono-functional SBR.h But the improvement was not so great as we expected. Then, we evaluated the modified SBRs in the blend system with NR, IR, high cis-BR or emulsion SBR. The hysteresis properties were extremely improved by using the hdi-functional SBR h with NR or IR blend system. We conclude this striking effect stem from the distribution ratio of carbon black into modified SBR's phase or other rubbers' phases, and that is optimized by using the hdi-functional SBR.h
   
Photosensitization of Carbazole Derivatives in Cationic Polymerization with Novel Sensitivity to Near UV Light
Yaohong Chen , Tetsuya Yamamura , Katsutoshi Igarashi
Photosensitizers based on carbazole structure were designed and developed for cationic polymerization. Along with triarylsulfonium or diaryliodonium salts, the carbazole derivatives showed high photosensitization effect in cationic photopolymerization of epoxides. The photophysical properties of the carbazole derivatives were studied in terms of electronic absorption, fluorescence and phosphorescence spectrometry. Moreover, an unique photosensitization mechanism of the carbazole derivatives was discussed upon studies of fluorescence quenching, redox behavior and kinetics of the photopolymerization by using time-resolved fluorescence spectrometry, cyclic voltammetry and differential photo-scanning calorimetry, respectively. The results confirmed the redox photosensitization of the carbazole derivatives in the cationic polymerization. The photosensitization of the carbazole and its ring or N-alkylated derivatives occurs predominantly in singlet excited states at a rate of diffusion limit, whereas the carbazole derivatives with carbonyl substituents sensitize onium salts via triplet excited states on an expectation of Rehm-Weller equation in photoinduced electron transfer process.
   
top /  2009  /  2008  /  2007  /  2006  /  2005  /  2004  /  2003  /  2002  /  2001  /  2000  /  1999  /  1998  /  1997