JSR Corporation (President: Yoshinori Yoshida) has dramatically improved the practical performance of photoresist for ArF (Argon Fluoride Excimer Laser: wavelength: 193 nm) lithography used in the mass-production of cutting-edge memory and next-generation 32 nm semiconductors.
The research findings on this breakthrough were presented at an international conference on lithography technology for semiconductor manufacturing, "SPIE Advanced Lithography 2008," being held at the San Jose Convention Center in San Jose, California, on February 24 - 29. The presentation (presentation number 6923-12) was made on February 25 by JSR, in cooperation with Nikon Corporation and Tokyo Electron Ltd.
Although immersion lithography is an efficient technology for semiconductor manufacturing, it still has a number of problems. For example, the technology uses a method that requires the space between the lenses and the wafer to be filled with highly-purified water. In practical applications, it is difficult to keep the condition of the water stable and consistent, and water drops can be left on the wafer. These problems result in defective products, which negatively impact the high productivity of the overall manufacturing process.
In order to eliminate theses problems, JSR has launched a new range of top-coating materials for Immersion lithography called "TCX series." The product has received a high evaluation in a wide range of markets as a new international standard. Furthermore, ArF photoresist has been highly ranked as a leading-edge product.
With the latest development, JSR has further improved its range of protective top-coatings for immersion lithography. Simultaneously, JSR has newly developed a "non-topcoat photoresist" that does not require protective top-coatings. JSR, in collaboration with Nikon Corporation and Tokyo Electron Ltd., conducted joint evaluation tests of lithography performance, defects and productivity. The tests confirmed that the practical performance of the new product had been dramatically improved and is suitable for use in the mass-production of 32 nm semiconductors.
Next-generation 32 nm semiconductors that go far beyond the NA (numerical aperture) of 1.0 are to be fully-implemented later this year. By developing a non-topcoat photoresist for the next-generation 32 nm semiconductors, JSR is able to meet the wide range of user-needs that are continually increasing in search of improved performance and diversification. Thus, the new non-topcoat photoresist will take its place in JSR's impressive lineup of products such as ArF photoresist and protective top-coatings, which have been highly-evaluated within the industry.
Semiconductor manufacturing technologies have advanced every year. Nevertheless, various problems remain unresolved with regard to the immersion lithography technologies that are soon to come online in full-mass production. Both material manufacturers and equipment manufacturers have found that it is difficult for a single company to find effective solutions for all the problems than can arise from ever-advancing technologies. But by working together, JSR, Nikon, and Tokyo Electron have successfully developed technologies for the practical application of immersion lithography technologies from the aspect of materials, the lithographic exposure process, coating and developing process by making the best use of each company's know-how and technical excellence.
JSR continues to provide advanced lithography solutions to customers in a timely fashion by making the best use of the most-advanced immersion lithography evaluation tools that will be introduced this spring inside JSR's Yokkaichi Research Center.
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