JSR Corporation ("JSR"; president: Yoshinori Yoshida; head office: Tokyo) installs advanced immersion lithography*1 evaluation tools at the Yokkaichi Research Center.
The new equipment is designed to develop the materials required for semiconductor manufacturing beyond the 32 nanometer*2 generation (45 nanometer half-pitch), which is expected to begin in 2010. Equipment for evaluating advanced immersion lithography materials, including advanced ArF immersion lithography equipment (NA 1.30), automated spin-on development devices and automated defect verification devices, will be installed in the research center's clean room (Class 10 level*3) from April, 2008.
JSR, the world's leading material manufacturer, launched an advanced lithography material production facility for next generation semiconductor manufacturing earlier this year. The production line, called ME Line, is designed to supply, produce, and manufacture materials suitable for producing the next generation of semiconductors.
JSR's new advanced immersion lithography evaluation tools will enable it to accelerate the development of new materials and quality improvement programs. It will also enhance customer support by enabling the company to verify the product in the same environment as its semiconductor manufacturer customers.
JSR will ensure its position as a market leader by continually developing the advanced materials required for next generation semiconductor manufacturing, including ArF photoresists, topcoat materials for immersion lithography, spin-on hardmask materials, high density packaging materials and CMP materials.
*1 immersion lithography: A technology that uses water instead of air, as an agent between the photoresist and the lens. Water has a higher refractive factor, which provides a high numerical aperture (NA)*4 and enables the manufacture of semiconductors with finer and smaller patterns.
*2 nanometer: A billionth part of one meter
*3 Class 10: This is the level of cleanliness in which there are less than 10 dust particles of more than 0.5 μm in every one cubic feet.
*4 numerical aperture (NA): The higher the numerical aperture, the higher the resolution.
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