TOKYO -- December 5, 2006 -- JSR Corporation announced today that it completed a new fine production line in Yokkaichi, Mie to offer high quality lithography materials to the next generation semiconductor device manufacturers. This line is designed based on new concepts targeting production of zero-defect quality materials.
The line will be up and running in early 2007. Investment made for the line was approximately USD $9 million and it will be discussed by Yokkaichi Plant Manager Hasegawa-san at JSR Seminar 2006 held on Friday, December 8th at New Otani Makuhari Hotel during SEMICON Japan.
JSR plans to manufacture materials for the 45nm node and beyond, such as ArF photoresists, topcoat materials for immersion lithography, and spin-on hardmask materials. Quality requirements of the materials for advanced devices are getting tighter and tighter and lithography materials, defects and CD control are crucial items for those requirements.
This new facility is designed as a super fine production line, which is in a cleanroom environment and adopts innovative ideas for vessel and piping designs to target zero defects and higher quality materials.
JSR provides advanced materials for next generation semiconductor devices, such as lithography materials, spin-on hardmask materials, packaging materials, CMP consumables and spin-on low-k dielectrics. |
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