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JSR introduces self-freezing ArF Photoresist for double patterning process
- New Material will extend lifetime of ArF exposure and simplify the double patterning process for semiconductor manufacturing -

PRODUCTS  06/29/2009
JSR announced today that it has achieved 26nm line and space patterns for 22nm node and beyond semiconductor devices using a new "self-freezing" ArF Photoresist material for double patterning. The material was developed to further simplify the double patterning process for semiconductor manufacturing in comparison to the "freezing materials" process introduced last year. The results will be presented at the "The 26th International Conference of Photopolymer Science and Technology" held from June 30 to July 3.

Double patterning processes, such as double exposure/double etch or double exposure/single etch, are promising methods for the 22nm node semiconductor manufacturing process.
JSR's "self-freezing ArF photoresist" has the function of thermosetting by preventing the first resist material from mixing into the solvent of the second resist material by hardening the surface of the 1st resist material. In terms of lithographic performance, the new self-freezing ArF Photoresist achieves high resolution because it is designed based on JSR's advanced ArF Photoresist chemistry. JSR's high performance ArF Photoresist is used for the second resist resulting in 26nm line and space patterns.

These results prove that it is possible to simplify the double patterning process and show the possibilities of ArF exposure technology being extended to resolve very fine pitches even for the post-22nm node with JSR's high resolution ArF photoresists.
The results will be presented at the "The 26th International Conference of Photopolymer Science and Technology" conference on July 3rd.